R6012ANX transistors 1/5 10v drive nch mosfet R6012ANX z structure silicon n-channel mosfet z features 1) low on-resistance. 2) fast switching speed. 3) gate-source voltage (v gss ) guaranteed to be 30v. 4) drive circuits can be simple. 5) parallel use is easy. z applications switching z dimensions (unit : mm) to-220fm (1)base (2)collector (3)emitter 4.5 2.8 0.75 3.2 ( 2 )( 3 ) ( 1 ) 0.8 2.54 2.6 2.54 1.3 1.2 14.0 12.0 8.0 2.5 10.0 15.0 z packaging specifications z inner circuit package code basic ordering unit (pieces) ? 500 bulk R6012ANX type z absolute maximum ratings (ta=25 c) parameter range of storage temperature channel temperature total power dissipation (tc=25 c) drain current gate-source voltage drain-source voltage v dss v gss p d tch 600 v v a w c 30 12 i d i dp continuous pulsed a 48 50 150 tstg c ? 55 to + 150 avalanche energy avalanche current i as 6 e as 9.6 symbol limits unit ? 1 pw 10 s, duty cycle 1% ? 2 l 500 h, v dd = 50v, r g = 25 ? , starting, tch = 25 c ? 3 limited only by maximum temperature allowed ? 1 ? 3 ? 3 i s a i sp a a mj continuous pulsed 12 48 source current (body diode) ? 1 ? 2 ? 2 ? 1 body diode (1) gate (2) drain (3) source ? 1 (1) (2) (3) www.datasheet.co.kr datasheet pdf - http://www..net/
R6012ANX transistors 2/5 z thermal resistance parameter c/w rth(ch-c) symbol limits unit channel to case 2.5 z electrical characteristics (ta=25 c) parameter gate-source leakage drain-source breakdown voltage zero gate voltage drain current gate threshold voltage static drain-source on-state resistance forward transfer admittance input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time total gate charge gate-source charge gate-drain charge symbol i gss v (br)dss i dss v gs(th) r ds(on) c iss | y fs | c oss c rss min. ? 600 ? 2.5 ? ? 3.5 ? ? ? ? ? ? 0.32 1300 ? 890 45 100 ? 100 4.5 0.42 ? ? ? ? na v gs = 30v, v ds = 0v i d = 1ma, v gs = 0v v ds = 600v, v gs = 0v v ds = 10v, i d = 1ma i d = 6a, v gs = 10v v ds = 25v i d = 6a, v ds = 10v v gs = 0v f = 1mhz v a v ? pf s pf pf t d(on) ? 30 ? ns t r ? 30 ? v gs = 10v ns t d(off) ? 90 ? r l = 50 ? ns t f ? 35 ? r g = 10 ? ns q g ? 35 ? v dd 300v i d = 12a v gs = 10v r l = 25 ? / r g = 10 ? nc q gd ? 15 ? nc typ. max. unit conditions i d = 6a, v dd 300v ? pulsed ? ? ? ? ? ? ? ? q gs ? 7 ? nc ? z body diode characteristics (source-drain) (ta=25 c) v sd ?? 1.5 v i s = 12a, v gs =0v forward voltage ? pulsed parameter symbol min. typ. max. unit conditions ? www.datasheet.co.kr datasheet pdf - http://www..net/
R6012ANX transistors 3/5 z electrical characteristic curves 0 10 20 30 40 0 1020304050 ta= 25c pulsed 5.0v v gs = 4.5v 6.0v 7.0v 8.0v 6.5v 10v fig .2: typical output char acter istics( ) 0.01 0.1 1 10 100 01 2345 67 v ds = 10v pulsed ta= 125c ta= 75c ta= 25c ta= - 25c fig .4 typical tr ansfer char acter istics 0.01 0.1 1 10 0.001 0.01 0.1 1 10 100 v gs = 10v pulsed ta= 125c ta= 75c ta= 25c ta= - 25c fig .6 static dr ain- sour ce on- state resistance vs. dr ain cur r ent 0 0.2 0.4 0.6 0.8 0 5 10 15 ta= 25c pulsed i d =6a i d = 12a fig .7 static dr ain- sour ce on- state resistance vs. gate source 0.001 0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 100 v ds = 10v pulsed ta= - 25c ta= 25c ta= 75c ta= 125c fig .9 for war d tr ansfer admittance vs. drain current 0.01 0.1 1 10 100 0.1 1 10 100 1000 ta = 25c single pulse dc oper ation p w =100us p w =1ms oper ation in this ar ea is limited by r ds(on) fig .1 maximum safe oper ating aer a fig .3: typical output characteristics( ) 0 5 10 15 20 012345 ta= 25c pulsed v gs = 4.5v 5.0v 6.0v 5.5v 6.5v 7.0v 8.0v 10v fig .8 static dr ain- sour ce on- state resistance vs. channel temper atur e 0 0.2 0.4 0.6 0.8 -50 0 50 100 150 v gs = 10v pulsed i d = 6a i d = 12a fig .5 gate thr eshold voltag e vs. channel temper atur e 0 1 2 3 4 5 6 - 50 0 50 100 150 v ds = 10v i d = 1ma drain-source voltage : v ds ( v ) drain current : i d (a) drain-source voltage: v ds (v) drain current: i d (a) drain-source voltage: v ds (v) drain current: i d (a) drain current : i d (a) static drain-source on-state resistance : r ds(on) ( ? ) channel temperature: t ch (c) gate threshold voltage: v gs(th) (v) gate-source voltage : v gs (v) drain current : i d (a) gate-source voltage : v gs (v) static drain-source on-state resistance : r ds(on) ( ? ) channel temperature: t ch (c) static drain-source on-state resistance : r ds(on ) ( ? ) drain current : i d (a) forward transfer admittance : |yfs| (s) www.datasheet.co.kr datasheet pdf - http://www..net/
R6012ANX transistors 4/5 0.0001 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 100 1000 ta = 25c sing le pulse : 1unit rth ch-a t = t rth ch-a rth ch-a = 53.0 c/w 10 100 1000 0.1 1 10 100 ta= 25c di / dt= 100a / s v gs = 0v pulsed fig .13 rever se recover y time vs.rever se dr ain curr ent 0.01 0.1 1 10 100 00.511.5 v gs = 0v pulsed ta= 125c ta= 75c ta= 25c ta= - 25c fig .10 rever se dr ain cur r ent vs. sourse-drain voltag e 0 5 10 15 0 1020 304050 ta= 25c v dd = 300v i d = 12a r g = 10 ? pulsed fig .12 dynamic input char acter istics 1 10 100 1000 10000 0.1 1 10 100 1000 c is s c oss c rss ta= 25c f= 1mhz v gs = 0v fig .11 typical capacitance vs. dr ain- sour ce voltag e 1 10 100 1000 10000 0.01 0.1 1 10 100 t r t f t d(on) t d(off) ta= 25c v dd = 300v v gs = 10v r g = 10 ? pulsed fig.14 switching char acter istics fig .15 normalized tr ansient ther mal resistance vs. pulse width total gate charge : q g (nc) gate-source voltage : v gs (v) drain-source voltage : v ds (v) capacitance : c (pf) source-drain voltage : v sd (v) reverse drain current : i dr (a) reverse drain current : i dr (a) reverse recovery time: t rr (ns) drain current : i d (a) switching time : t (ns) pulse width : pw(s) normarized transient thermal resistance : r (t) www.datasheet.co.kr datasheet pdf - http://www..net/
R6012ANX transistors 5/5 z switching characteristics measurement circuit fig.1-1 switching time measurement circuit fig.1-2 switching waveforms fig.2-1 gate charge measurement circuit fig.2-2 gate charge waveform fig.3-1 avalanche measurement circuit fig.3-2 avalanche waveform i g (const.) www.datasheet.co.kr datasheet pdf - http://www..net/
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